FDG6304P 数据手册
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FDG6304P 8 pages
技术规格
- RoHS: true
- Type: 2 P-Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDG6304P
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 300mW
- Total Gate Charge (Qg@Vgs): 1.5nC@4.5V
- Drain Source Voltage (Vdss): 25V
- Input Capacitance (Ciss@Vds): 62pF@10V
- Continuous Drain Current (Id): 410mA
- Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.1Ω@410mA,4.5V
- Package: SOT-363
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 410mA
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 410mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88 (SC-70-6)
- Base Part Number: FDG6304
- detail: Mosfet Array 2 P-Channel (Dual) 25V 410mA 300mW Surface Mount SC-88 (SC-70-6)